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UTC UT136FE
TRIACS
DESCRIPTION
Glass passivated sensitive gate triacs in a full pack,plastic envelop, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
TRIAC
SYMBOL
MT2
1
TO-220F
G MT1
1:MT1 2:MT2 3:GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages UT136FE-5 UT136FE-6 UT136FE-8
SYMBOL
VDRM IT(RMS)
RATINGS
500* 600* 800 4
UNIT
V
RMS on-state current full sine wave; Ths 92 C Non-repetitive peak on-state current Full sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 20ms t = 16.7 ms I2t for fusing (t = 10 ms) Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/s T2+ G+ T2+ GT2- GT2- G+
A
ITSM I2t
25 27 3.1
A A2s
dIT /dt
50 50 50 10
A/s
Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W Storage temperature Tstg -40 ~ 150 Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/s.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-022,B
UTC UT136FE
PARAMETER
Repetitive paek voltage form all three terminals to external heatsink (R.H.65%,clean and dustfree) Capacitance from MT2 to external heatsink (f=1MHz)
TRIAC
SYMBOL
Visol Cisol 12
ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25C,unless otherwise specified)
MIN TYP MAX
1500
UNIT
V pF
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to heatsink (Full or half cycle) with heatsink compound without heatsink compound Thermal resistance Junction to ambient (In free air)
SYMBOL
Rth j-hs Rth j-a
MIN
TYP
MAX
5.5 7.2
UNIT
K/W K/W
55
STATIC CHARACTERISTICS (Tj=25C,unless otherwise specified)
PARAMETER
Gate trigger current IGT
SYMBOL
CONDITIONS
VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125C VD = VDRM(max) ; Tj = 125 C
MIN
TYP
2.5 4.0 5.0 11 3.0 10 2.5 4.0 2.2 1.4 0.7 0.4 0.1
MAX
10 10 10 25 15 20 15 20 15 1.7 1.5 0.5
UNIT
mA
Latching current IL
mA
Holding current On-state voltage Gate trigger voltage Off-state leakage current
IH VT VGT ID
0.25
mA V V V mA
DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise specified)
PARAMETER
Critical rate of rise of Off-state voltage Gate controlled turn-on time
SYMBOL
dVD /dt tgt
CONDITIONS
VDM = 67% VDRM(max) ; Tj =125C; exponential waveform; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/s
MIN
TYP
50 2
MAX
UNIT
V/s s
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-022,B
UTC UT136FE
TYPICAL CHARACTERISTICS
8 Ptot/W 7 6 5 4 3 2 1 0 0 1 2 Ths(max)/C IT(RMS)/A
TRIAC
81 86.5
5 4 3 2 1
=180
92
=120 97.5 =90 =60 103 =30 108.5 114 119.5
92
125 5 4 3 IT(RMS) /A Fig.1. Maximum on-state dissipation Ptot,versus rms on-state current , IT(RMS), where =conduction angle.
0 -50
50 100 150 Ths/C Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. 0
ITSM/A 1000 IT T ITSM
IT(RMS)/A 12 10 time 8 6 4 T2-G+ quadrant 2 10ms 100ms 0 0.01 0.1 1 10
Tj initial=125max
100
dIT/dt limit
10 10us
100us
1ms T/s
Fig.2. Maximum Permissible non-repetitive peak on-state Current ITSM ,versus pulse width tp, for sinusoidal currents,tp 20ms. 30 25 20 15 10 5 0 0 10 100 1000 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current I TSM,versus number of cycles,for sinusoidal currents,f=50HZ.
Tj initial=125 max
surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current I T(RMS),versus surge duration ,for sinusoidal current,f=50HZ;Ths92 VGT(Tj) VGT(25)
ITSM/A IT T ITSM time
1.6 1.4 1.2 1 0.8 0.6
0 0
0.4 -50
50 50
100 100
150 150
Tj/ Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25),versus junction temperature Tj.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-022,B
UTC UT136FE
IGT(Tj) IGT(25)
T2+G+ T2+GT2-GT2-G+
TRIAC
IT/A 12 10 8 6 4 2 0 50 Tj/ 100 150 0 0 0.5 1 1.5 VT/V 2 2.5 3
Tj=125 Tj=25
3 2.5 2 1.5 1 0.5
max typ
Vo=1.27V Rs=0.091 Ohms
0 -50
Fig. 7.Normalised gate trigger Current IGT(Tj)/I GT(25),versus junction temperature Tj IL(Tj) IL(25)
.
Fig.10.Typical and maximum on-state characteristic.
10
Zth j-hs (K/W)
with heatsink compound without heatsink compound
3 2.5 2 1.5 1 0.5
1
unidirectional bidirectional
0.1
PD
tp t
0 -50
0
50 Tj/
100
150
0.01 10us
0.1ms
1ms
10ms tp / s
0.1s
1s
10s
3 2.5 2 1.5 1 0.5
Fig.8.Normalised latching Current I L(Tj)/I L(25), versus junction temperature Tj. IH(Tj) IH(25)
Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. 1000 dVD /dt(V/us)
100
10
0 -50
0
50 Tj/
100
150
1
0
50 Tj/C
100
150
Fig. 9.Normalised holding current I H(Tj)/I H(25), versus junction temperature Tj .
Fig.12.Typical,critical rate of rise of off-satate voltage,dVD/dt versus junction temperature Tj.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-022,B
UTC UT136FE
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R401-022,B

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